Effect of magnetic quantization on the gate capacitance of MOS structures of ternary semiconductorsMONDAL, M; GHATAK, K. P.Physica scripta (Print). 1985, Vol 31, Num 6, pp 613-615, issn 0031-8949Article

Interface properties of metal/oxide/semiconductor structures with ultrathin plasma SiO₂ATANASSOVA, E. D; KOVTCHAVZEV, A. P.Thin solid films. 1983, Vol 100, Num 2, pp 131-139, issn 0040-6090Article

Effects of Na⁺ impurities on the linewidth of intersubband resonances in Si MOS structuresGLASER, E; CZAPUTA, R; MCCOMBE, B. D et al.Solid state communications. 1985, Vol 54, Num 8, pp 715-719, issn 0038-1098Article

Calculation of the properties of a MOS structure with a quasi-one-dimensional electron gasKOZYREV, S. V; OSIPOV, V. YU.Soviet physics. Technical physics. 1990, Vol 35, Num 10, pp 1154-1157, issn 0038-5662Article

On Flat-band voltage dependence on channel length in short-channel threshold modelHUANG, J. S. T; SCHRANKLER, J. W.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, issn 0018-9383, p. 1226Article

Shallow junction for 0.1 μm n-type metal-oxide semiconductor devicesWATTS, R. K; LUFTMAN, H. S; BAIOCCHI, F. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 515-523, issn 0734-211XConference Paper

Dual-transistor method to determine threshold-voltage shifts due to oxide-trapped charge and interface traps in metal-oxide-semiconductor devicesFLEETWOOD, D. M.Applied physics letters. 1989, Vol 55, Num 5, pp 466-468, issn 0003-6951, 3 p.Article

Pd-gate MOS sensor for detection of methanol and propanolPANDEY, Preeti; SRIVASTAVA, J. K; MISHRA, V. N et al.Journal of natural gas chemistry. 2011, Vol 20, Num 2, pp 123-127, issn 1003-9953, 5 p.Article

A new approach to verify and derive a transverse-field dependent mobility model for electrons in MOS inversion layersHYUNGSOON SHIN; TASCH, A. F; MAZIAR, C. M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1117-1124, issn 0018-9383, 8 p.Article

The effect of illumination on inversion layer formation in metal-thin oxide-silicon devicesSHANKER, D; KAR, S.Journal of applied physics. 1983, Vol 54, Num 2, pp 1124-1127, issn 0021-8979Article

A pulsed interface-probing technique for MOS interface characterization at mid-gap levelsCILINGIROGLU, U.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2391-2396, issn 0018-9383Article

Metal/oxide/semiconductor interface investigated by monoenergetic positronsUEDONO, A; TANIGAWA, S; OHJI, Y et al.Physics letters. A. 1988, Vol 133, Num 1-2, pp 82-84, issn 0375-9601Article

RADIATION EFFECTS ON THIN-OXIDE MOS CAPACITORS CAUSED BY ELECTRON BEAM EVAPORATION OF ALUMINUMHAMASAKI M.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 299-303; BIBL. 16 REF.Article

EFFECT OF HIGH FIELD STRESSES ON INTERFACE STATES OF N-MOS CAPACITORSJOURDAIN M; SALACE G; PETIT C et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 251-257; BIBL. 21 REF.Article

CHARGE MOTION IN SILICON METAL/OXIDE/SEMICONDUCTOR STRUCTURES. IISZABO R; NEMETH SALLAY M; SZEP IC et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 94; NO 2; PP. 143-148; BIBL. 18 REF.Article

ANOMALOUS BEHAVIOUR IN PULSED MOS CAPACITORS AND GATED DIODES DUE TO LOCALISED DEFECTSRABBANI KS; LAMB DR.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 366-368; BIBL. 3 REF.Article

Determination of the line edge roughness specification for 34 nm devicesLINTON, T; CHANDHOK, M; RICE, B. J et al.IEDm : international electron devices meeting. 2002, pp 303-306, isbn 0-7803-7462-2, 4 p.Conference Paper

The characteristics of thin-film gallium phosphide MOS structures with a tunnel transparent native anodic oxideKOROTCHENKOV, G. S; GUTKIN, A. A; MARINOVA, A. M et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 1, pp 355-363, issn 0031-8965Article

Effect of inversion on barrier height in a metal-SiO₂-Si tunnel systemDAW, A. N; CHATTOPADHYAY, P.Solid-state electronics. 1984, Vol 27, Num 12, pp 1057-1060, issn 0038-1101Article

ON THRESHOLD AND FLAT-BAND VOLTAGES FOR MOS DEVICES WITH POLYSICILICON GATE AND NONUNIFORMLY DOPED SUBSTRATEMARSHAK AH; SHRIVASTAVA R.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 361-364; BIBL. 9 REF.Article

THE EFFECT OF TEMPERATURE ON THE C-V AND G-V CHARACTERISTICS OF SI-SIO₂ METAL STRUCTURESABHAI MANSINGH; SRIVASTAVA RK.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 6; PP. 877-886; BIBL. 12 REF.Article

On the piezoactivity of Si MOS structuresBURY, P; DURCEK, J; SAKALAUSKAS, K et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 2, pp K207-K209, issn 0031-8965Article

Analysis of gold-doped MOS structuresSACHELARIE, D.Physica status solidi. A. Applied research. 1985, Vol 90, Num 1, pp 401-407, issn 0031-8965Article

Memory-function approach to ellipticity and Faraday rotation in a metal-oxide-semiconductor systemÓCONNELL, R. F; WALLACE, G.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4643-4646, issn 0163-1829Article

A time domain analysis of the charge pumping currentGHIBAUDO, G; SAKS, N. S.Journal of applied physics. 1988, Vol 64, Num 9, pp 4751-4754, issn 0021-8979Article